TPH3206LDG-TR 单 FET、MOSFET_富佳诚电子_A BEST TRADE_集成电路_储存器_嵌入式处理器_嵌入式控制器

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类型	描述
制造商	Transphorm
系列	-
包装	托盘
产品状态	OBSOLETE
包装/箱	3-PowerDFN
安装类型	Surface Mount
工作温度	-55°C ~ 175°C (TJ)
技术	GaNFET (Gallium Nitride)
场效应管类型	N-Channel
电流 - 连续漏极 (Id) @ 25°C	17A (Tc)
Rds On（最大）@Id、Vgs	180mOhm @ 11A, 8V
功耗（最大）	96W (Tc)
Vgs(th)（最大值）@Id	2.6V @ 500µA
供应商设备包	3-PQFN (8x8)
驱动电压（最大导通电阻、最小导通电阻）	8V
Vgs（最大）	±18V
漏源电压 (Vdss)	600 V
栅极电荷 (Qg)（最大值）@Vgs	9.3 nC @ 4.5 V
输入电容 (Ciss)（最大值）@Vds	760 pF @ 480 V

类型

描述

制造商

Transphorm

系列

包装

托盘

产品状态

OBSOLETE

包装/箱

3-PowerDFN

安装类型

Surface Mount

工作温度

-55°C ~ 175°C (TJ)

技术

GaNFET (Gallium Nitride)

场效应管类型

N-Channel

电流 - 连续漏极 (Id) @ 25°C

17A (Tc)

Rds On（最大）@Id、Vgs

180mOhm @ 11A, 8V

功耗（最大）

96W (Tc)

Vgs(th)（最大值）@Id

2.6V @ 500µA

供应商设备包

3-PQFN (8x8)

驱动电压（最大导通电阻、最小导通电阻）

Vgs（最大）

±18V

漏源电压 (Vdss)

600 V

栅极电荷 (Qg)（最大值）@Vgs

9.3 nC @ 4.5 V

输入电容 (Ciss)（最大值）@Vds

760 pF @ 480 V